Ion-beam-deposited films for refractory-metal tunnel junctions
- 1 May 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 19 (3) , 960-963
- https://doi.org/10.1109/tmag.1983.1062371
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Selective niobium anodization process for fabricating Josephson tunnel junctionsApplied Physics Letters, 1981
- Superconductivity of Ta-Zr films produced by co-sputteringIEEE Transactions on Magnetics, 1981
- Niobium oxide-barrier tunnel junctionIEEE Transactions on Electron Devices, 1980
- Investigation of ion-beam-sputtered Nb-Ti thin films by complementary use of backscattering and nuclear-reaction microanalysisJournal of Applied Physics, 1978
- New technique for electron-tunneling junction fabrication and its application to tantalum and niobiumPhysical Review B, 1978
- Superconductivity of Nb3Sn, Nb, V, Pb and Sn after low temperature irradiation with 25 MeV oxygen ionsJournal of Nuclear Materials, 1978
- Anomalous electrical resistivity and defects incompoundsPhysical Review B, 1977
- Ion implantation during film growth and its effect on the superconducting properties of niobiumJournal of Applied Physics, 1975
- Effects of interstitial oxygen on the superconductivity of niobiumPhysical Review B, 1974
- Variation of superconducting transition temperatures of transition-metal thin films deposited with the noble gasesJournal of Applied Physics, 1973