Analysis of Trapping and Detrapping in Semi-Insulating GaAs Detectors

Preprint

29 January 1997

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.hep-ex/9701018

Abstract

To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2+ is the dominant electron trap in semi-insulating GaAs.

Keywords

TRAPPING AND DETRAPPING
PARTICLES WITH A CHARGE
SEMI INSULATING GAAS
PARTICLE DETECTORS
RESISTIVITY

All Related Versions

Version 1, 1997-01-29, ArXiv
Published version: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 395 (1), 49.

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