Analysis of trapping and detrapping in semi-insulating GaAs detectors
- 1 August 1997
- journal article
- conference paper
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 395 (1) , 49-53
- https://doi.org/10.1016/s0168-9002(97)00632-3
Abstract
No abstract availableKeywords
All Related Versions
This publication has 6 references indexed in Scilit:
- Influence of contacts and substrate on semi-insulating GaAs detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1997
- Evaluation of active layer properties and charge collection efficiency of GaAs particle detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1995
- Electrostatic and current transport properties of n+/semi-insulating GaAs junctionsJournal of Applied Physics, 1993
- Bulk GaAs room temperature radiation detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1992
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979
- Extension of Ramo's theorem as applied to induced charge in semiconductor detectorsNuclear Instruments and Methods, 1971