Verifiticion of a SEU Model for Advanced 1-um CMOS Structures Using Heavy Ions
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6) , 1586-1589
- https://doi.org/10.1109/tns.1986.4334646
Abstract
Modeling and test repsults are reported for TRW 1-um CMOS circuits. Excellent agreement between prediction And both Cyclotron and Californium testing has been obtained, and the results indicate that acceptable SEU error rates; can be achieved with a bulk 1u CMOS process. Unique problems in estimating SEU error rates for these advanced technology devices are discussed and key areas for further study are Proposed.Keywords
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