The role of the interfacial SiOx layer in SnO2/n-Si photocells
- 1 November 1984
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 35 (3) , 189-192
- https://doi.org/10.1007/bf00616973
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Interfacial stability of SnO2/n-Si and In2O3:Sn/n-Si heterojunction solar cellsJournal of Applied Physics, 1983
- Preparation and properties of Si/SnO2 heterojunctionsSolar Energy Materials, 1983
- Evidence of tunnel-assisted transport in nondegenerate MOS and semiconductor-oxide-semiconductor diodes at room temperatureJournal of Applied Physics, 1980
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980
- Asymmetry in the SiO2 tunneling barriers to electrons and holesJournal of Applied Physics, 1980
- Thermal degradation of indium-tin-oxide/p-silicon solar cellsJournal of Applied Physics, 1980
- MIS solar cells: A reviewIEEE Transactions on Electron Devices, 1978
- The operation of the semiconductor-insulator-semiconductor (SIS) solar cell: TheoryJournal of Applied Physics, 1978
- Properties of the silicon–SiO2 interfaceJournal of Vacuum Science and Technology, 1977
- Accelerated life tests of SnO2—Si heterojunction solar cellsIEEE Transactions on Electron Devices, 1977