Influence of wettability on the properties of thin porous platinum films as gates of metal-oxide-semiconductor devices in electrolytes
- 15 March 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 240 (1-2) , 147-151
- https://doi.org/10.1016/0040-6090(94)90712-9
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Catalytic metals and field-effect devices—a useful combinationSensors and Actuators B: Chemical, 1990
- Structure and ammonia sensitivity of thin platinum or iridium gates in metal-oxide-silicon capacitorsThin Solid Films, 1989