Structure and ammonia sensitivity of thin platinum or iridium gates in metal-oxide-silicon capacitors
- 1 October 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 177 (1-2) , 77-93
- https://doi.org/10.1016/0040-6090(89)90558-0
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Quasi-static and high frequency C(V)-response of thin platinum metal—oxide—silicon structures to ammoniaSensors and Actuators, 1988
- Interaction of oxygen with a clean Ir(111) surfaceSurface Science, 1987
- Optimization of ammonia-sensitive metal-oxide-semiconductor structures with platinum gatesSensors and Actuators, 1987
- The ammonia sensitivity of platinum-gate MOSFET devices: dependence on gate electrode morphologySensors and Actuators, 1987
- The fabrication of amorphous SiO2 substrates suitable for transmission electron microscopy studies of ultrathin polycrystalline filmsThin Solid Films, 1986
- Gas sensors based on catalytic metal-gate field-effect devicesSensors and Actuators, 1986
- Nucleation and growth of thin filmsReports on Progress in Physics, 1984
- Performance of gas-sensitive Pd-gate mosfets with SiO2 and Si3N4 gate insulatorsSensors and Actuators, 1983
- Ammonia oxidation on the Pt(111) and Pt(S)-12(111) $times; (111) surfacesJournal of Catalysis, 1980
- The adsorption of oxygen on a stepped platinum single crystal surfaceSurface Science, 1978