Performance of gas-sensitive Pd-gate mosfets with SiO2 and Si3N4 gate insulators
- 31 December 1983
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 4, 593-598
- https://doi.org/10.1016/0250-6874(83)85072-0
Abstract
No abstract availableKeywords
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