An alternative Mg precursor for p-type doping of OMVPE grown material
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 37-41
- https://doi.org/10.1016/0022-0248(86)90279-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Ionized Mg doping in molecular-beam epitaxy of GaAsJournal of Applied Physics, 1986
- Metalorganic–vapor-phase-epitaxial growth of Mg-doped Ga1−xAlxAs layers and their propertiesJournal of Applied Physics, 1986
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985
- A study of p-type dopants for InP grown by adduct MOVPEJournal of Crystal Growth, 1984
- Factors influencing doping control and abrupt metallurgical transitions during atmospheric pressure MOVPE growth of AlGaAs and GaAsJournal of Crystal Growth, 1984
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983