Ionized Mg doping in molecular-beam epitaxy of GaAs
- 15 February 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (4) , 1092-1095
- https://doi.org/10.1063/1.336545
Abstract
Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular‐beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019 cm−3 have been achieved. Photoluminescence measurements suggest that the damage due to Mg‐ion bombardment is negligible when the ion accelerating voltage (Va) ≲130 V. For higher Va , the damage can be removed by postgrowth annealing.This publication has 22 references indexed in Scilit:
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