Ion-beam-induced amorphization and dynamic annealing processes in silicon
- 1 March 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 48 (1-4) , 431-434
- https://doi.org/10.1016/0168-583x(90)90154-m
Abstract
No abstract availableKeywords
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- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970