FTIR studies reveal that silicon-containing laser-induced desorption products are surface reaction intermediates
Open Access
- 4 January 1991
- journal article
- Published by Elsevier in Chemical Physics Letters
- Vol. 176 (1) , 128-134
- https://doi.org/10.1016/0009-2614(91)90022-2
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Adsorption and desorption kinetics for SiCl4 on Si(111)7×7The Journal of Chemical Physics, 1990
- Hydrogen desorption from the monohydride phase on Si(100)The Journal of Chemical Physics, 1990
- Decomposition of H2O ON Si(111)7 × 7 studied using laser-induced thermal desorptionSurface Science, 1989
- Oxidation kinetics of Si(111)7×7in the submonolayer regimePhysical Review B, 1989
- Decomposition of NH3 on Si(111) 7×7 studied using laser-induced thermal desorptionJournal of Vacuum Science & Technology B, 1989
- Laser-induced thermal desorption of Silicon-containing surface reaction intermediates from Si(111)7 × 7Surface Science, 1989
- Desorption kinetics of hydrogen and deuterium from Si(111) 7×7 studied using laser-induced thermal desorptionThe Journal of Chemical Physics, 1988
- Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfacesPhysical Review B, 1988
- Microstructure and formation mechanism of porous siliconApplied Physics Letters, 1985
- Determination of lattice parameter and elastic properties of porous silicon by X-ray diffractionJournal of Crystal Growth, 1984