Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction
- 1 October 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (3) , 727-732
- https://doi.org/10.1016/0022-0248(84)90111-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- X-ray topographic characterization of porous silicon layersJournal of Crystal Growth, 1984
- Pore Size Distribution in Porous Silicon Studied by Adsorption IsothermsJournal of the Electrochemical Society, 1983
- X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layersJournal of Crystal Growth, 1978
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- Double-crystal spectrometer measurements of lattice parameters and X-ray topography on heterojunctions GaAs–AlxGa1−xAsActa Crystallographica Section A, 1976
- X-ray characterization of stresses and defects in thin films and substratesThin Solid Films, 1976
- Lattice mismatch at the interface in GaP-GaP and GaAIAs-GaAs epitaxial growthJournal of Crystal Growth, 1974
- Interface stress of AlxGa1−xAs–GaAs layer structuresJournal of Applied Physics, 1973
- Precision lattice constant determinationActa Crystallographica, 1960
- Densitometric and Electrical Investigation of Boron in SiliconPhysical Review B, 1955