Distortion compensation characteristics ofpre-distortion circuit for private mobile radio
- 28 September 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (20) , 1675-1676
- https://doi.org/10.1049/el:20001227
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980