A silicon pressure sensor using mos ring oscillators
- 31 July 1985
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 7 (3) , 167-176
- https://doi.org/10.1016/0250-6874(85)85018-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Stress-sensitive properties of silicon-gate MOS devicesSolid-State Electronics, 1981
- Piezoresistivity effects in MOS-FET useful for pressure transducersJournal of Physics D: Applied Physics, 1979
- A high sensitivity semiconductor strain sensitive circuitSolid-State Electronics, 1975
- The effect of strain on MOS transistorsSolid-State Electronics, 1969
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968