A high sensitivity semiconductor strain sensitive circuit
- 30 April 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (4) , 295-299
- https://doi.org/10.1016/0038-1101(75)90081-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The low temperature strain sensitivity of MOS transistorsSolid-State Electronics, 1973
- Piezoresistance in Quantized Conduction Bands in Silicon Inversion LayersJournal of Applied Physics, 1971
- The effect of strain on MOS transistorsSolid-State Electronics, 1969
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968