The low temperature strain sensitivity of MOS transistors
- 28 February 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (2) , 147-154
- https://doi.org/10.1016/0038-1101(73)90024-5
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Piezoresistance in Quantized Conduction Bands in Silicon Inversion LayersJournal of Applied Physics, 1971
- EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCEApplied Physics Letters, 1970
- Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon SurfacesJapanese Journal of Applied Physics, 1969
- The effect of strain on MOS transistorsSolid-State Electronics, 1969
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Simple System for Temperature Control and Cycling in the Range 4 to 300°KReview of Scientific Instruments, 1967
- Temperature Dependence of the Piezoresistance of High-Purity Silicon and GermaniumPhysical Review B, 1957
- Transport Properties of a Many-Valley SemiconductorBell System Technical Journal, 1955
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954