Local-field corrections to surface and interface core-level shifts in insulators
- 15 November 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (19) , 12884-12887
- https://doi.org/10.1103/physrevb.46.12884
Abstract
We present a model for the extra-atomic contributions to core-level shifts in insulating thin films on polarizable substrates. The final-state shift is calculated from the screening-dependent local fields at a photoemitting atom and shown to be comparable to the initial-state Madelung potential shift in polar crystals. For Xe(111) films, our model completely accounts for experimental results. For NaCl(100) and (111) surfaces, we present predictions of surface core-level shifts for simple bulk terminations. We discuss corrections which can be incorporated into our model.
Keywords
This publication has 20 references indexed in Scilit:
- Photoelectron study of: An inspection of core-level binding energies with the use of a point-ion model and self-consistent atomic-structure calculationsPhysical Review B, 1990
- Shift in XPS levels in ionic adsorbate layers due to electrostatic effectsSurface Science, 1989
- Surface Core Level Shifts of Clean And Hydrogen-Covered lnSb(110)Surface Science, 1988
- Effect of electrostatic screening on energy positions of electron spectra near/Si interfacesPhysical Review B, 1988
- Core-level binding-energy shifts at surfaces and in solidsSurface Science Reports, 1987
- Charge transfer from chemical shifts at (110) surfaces of III–V compound semiconductorsSolid State Communications, 1986
- Layer-resolved shifts of photoemission and Auger spectra from physisorbed rare-gas multilayersPhysical Review B, 1986
- Madelung effects at crystal surfaces: Implications for photoemissionPhysical Review B, 1981
- Ultraviolet Photoemission Spectroscopy of Solid Nitrogen and OxygenPhysica Status Solidi (b), 1975
- X-Ray Photoelectron Spectroscopy of Alkali HalidesThe Journal of Chemical Physics, 1972