Several- and Many-Electron Artificial-Atoms at Filling Factors between 2 and 1
- 1 January 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (1S)
- https://doi.org/10.1143/jjap.38.372
Abstract
We introduce new phenomena that can be studied in an artificial-atom vertical single electron transistor. As we move from the few-electron regime to the several-electron regime, and then the many-electron regime, features in the conductance peaks related to magnetic field induced spin polarization evolve. This allows us to probe the spin-flip region bounded by the last single-particle crossing at low field, and the eventual formation of a maximum density droplet at high field.Keywords
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