Electrons in artificial atoms
- 1 February 1996
- journal article
- Published by Springer Nature in Nature
- Vol. 379 (6564) , 413-419
- https://doi.org/10.1038/379413a0
Abstract
No abstract availableThis publication has 51 references indexed in Scilit:
- A room-temperature single-electron memory device using fine-grain polycrystalline siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Quantum-dot ground states in a magnetic field studied by single-electron tunneling spectroscopy on double-barrier heterostructuresPhysical Review B, 1995
- Fabrication technique for Si single-electron transistoroperating at room temperatureElectronics Letters, 1995
- Time-Resolved Tunneling of Single Electrons between Landau Levels in a Quantum DotPhysical Review Letters, 1994
- Transport in sub-micron resonant tunnelling devicesPhysica B: Condensed Matter, 1993
- Confinement and single-electron tunneling in Schottky-gated, laterally squeezed double-barrier quantum-well heterostructuresPhysical Review Letters, 1992
- Observation of Single-Electron Charging in Double-Barrier HeterostructuresScience, 1992
- Single-electron charging and periodic conductance resonances in GaAs nanostructuresPhysical Review Letters, 1990
- Observation of discrete electronic states in a zero-dimensional semiconductor nanostructurePhysical Review Letters, 1988
- Principles of the Theory of SolidsPublished by Cambridge University Press (CUP) ,1972