Removal and scattering of charge carriers by defect clusters in semiconductors
- 16 July 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 48 (1) , 263-269
- https://doi.org/10.1002/pssa.2210480136
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenideAdvances in Physics, 1975
- Radiation Damage in GaAs Gunn DiodesIEEE Transactions on Nuclear Science, 1970
- Carrier Removal in Neviron Irradiated SiliconIEEE Transactions on Nuclear Science, 1970
- Electrical Studies of Low-Temperature Neutron- and Electron-Irradiated Epitaxial n-Type GaAsJournal of Applied Physics, 1969
- Investigation of Inhomogeneities in GaAs by Electron-Beam ExcitationJournal of the Electrochemical Society, 1967
- Radiation Effects in GaAsJournal of Applied Physics, 1963
- Nature of Bombardment Damage and Energy Levels in SemiconductorsJournal of Applied Physics, 1959
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959
- Hall Effect and Conductivity in Porous MediaJournal of Applied Physics, 1956