Single heterostructure AlxGa1−xAs phase modulator with SnO2-doped In2O3 cladding layer
- 1 July 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (1) , 21-23
- https://doi.org/10.1063/1.88880
Abstract
Sputter deposition of low‐resistivity (0.02 Ω cm) layers of SnO2‐doped In2O3 onto AlxGa1−xAs results in heterojunction barriers to either n‐ or p‐type material. Low‐loss AlxGa1−xAs waveguides with SnO2‐In2O3 cladding have been fabricated. Their propagation properties can be efficiently modulated by means of the linear electro‐optic effect. Phase shifts for TE modes of 160 deg/V cm were measured at a wavelength λ=0.9 μm.Keywords
This publication has 10 references indexed in Scilit:
- Double-heterostructure GaAs-AlxGa1−xAs [110] p-n-junction-diode modulatorJournal of Applied Physics, 1976
- GaAs electro-optic directional-coupler switchApplied Physics Letters, 1975
- AlxGa1-xAs double-heterostructure rib-waveguide injection laserIEEE Journal of Quantum Electronics, 1975
- Optical and electrical properties of doped In2O3 filmsPhysica Status Solidi (a), 1975
- Transport coefficients of InAs epilayersApplied Physics Letters, 1974
- Transmission properties of rib waveguides formed by anodization of epitaxial GaAs on Alx Ga1−x As layersApplied Physics Letters, 1974
- Laser oscillation in epitaxial GaAs waveguides with corrugation feedbackApplied Physics Letters, 1973
- Propagation losses in metal-film-substrate optical waveguidesIEEE Journal of Quantum Electronics, 1972
- Highly Conductive, Transparent Films of Sputtered In[sub 2−x]Sn[sub x]O[sub 3−y]Journal of the Electrochemical Society, 1972
- Mode Reflectivity and Waveguide Properties of Double-Heterostructure Injection LasersJournal of Applied Physics, 1971