Homoepitaxial growth of ZnSe on dry-etched substrates
- 19 June 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (25) , 2553-2555
- https://doi.org/10.1063/1.101048
Abstract
High quality ZnSe layers have been grown by molecular beam epitaxy on dry‐etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl3 gas to 10 μm depth. The dry‐etched ZnSe substrates exhibited smooth surface morphology and showed excitonic emissions stronger than that from as‐polished substrates in photoluminescence (PL) measurements at 11 K. The low‐temperature PL spectra obtained from homoepitaxial ZnSe layers grown on the substrates dry etched at the optimum condition showed a strong free‐exciton emission at 2.804 eV and a dominant donor‐bound exciton emission at 2.798 eV. Since each excitonic emission shows a single peak, the homoepitaxial layers appear to be free from strain.Keywords
This publication has 11 references indexed in Scilit:
- Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layersPhysical Review B, 1988
- Etching and cathodoluminescence studies of ZnSeApplied Physics Letters, 1988
- Materials growth and its impact on devices from wide band gap II–VI compoundsJournal of Crystal Growth, 1988
- ZnSe homo-epitaxial growth by molecular beam epitaxyJournal of Crystal Growth, 1988
- Growth of high-quality ZnSe by MOVPE on (100) ZnSe substrateJournal of Crystal Growth, 1988
- The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAsJournal of Crystal Growth, 1987
- Segregated AlGaAs(110) grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Homo- and heteroepitaxial growth of high quality ZnSe by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Instabilities of (110) III–V compounds grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1983
- Alloy Clustering inCompound Semiconductors Grown by Molecular Beam EpitaxyPhysical Review Letters, 1982