Ion-beam induced atomic mixing at the Si02/Si interface studied by means of monte carlo simulation

1 January 1982

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 62 (3-4) , 231-236
https://doi.org/10.1080/00337578208222797

Abstract

Using a Monte Carlo simulation method, we have investigated the effects of ion-beam induced mixing at the silicon oxide/silicon interface. The simulation results are discussed and compared to those obtained by solving the associated Boltzmann transport equation using the discrete ordinate method as done by Christel and Gibbons.¹ We have found that both methods yield similar results if a displacement threshold Ed=3 keV, as used by these authors, is assumed. In addition, subsequent effects on oxygen recoil yields and through-interface recoil profiles which arise from the choice of a lower threshold displacement energy, Ed = 20 eV are reported here.

Keywords

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