New semiconductors TlInGaP and their gas source MBE growth
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 1195-1199
- https://doi.org/10.1016/s0022-0248(96)00936-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful GrowthJapanese Journal of Applied Physics, 1996
- InTlSb growth by OMVPEJournal of Crystal Growth, 1995
- InTlP — a proposed infrared detector materialApplied Physics Letters, 1994
- Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlatticesApplied Physics Letters, 1991