New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful Growth
- 1 July 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (7B) , L876
- https://doi.org/10.1143/jjap.35.l876
Abstract
New III–V compound semiconductors TlInGaP (thallium indium gallium phosphide) lattice-matched to InP are proposed for 0.9 µm to over 10 µm wavelength range laser diodes and their first successful growth is reported by gas-source molecular beam epitaxy. A type-I band lineup and a larger band discontinuity in the conduction band than in the valence band are expected for their heterostructures. They also have the potential to exhibit a temperature-independent band-gap energy (wavelength), which is promising for the fabrication of lasers that can be used in wavelength division multiplexing (WDM) optical fiber communication. Grown layers exhibit (2×4) surface reconstruction and have mirror-like surfaces. Phase separation is not observed in this material system by X-ray diffraction measurement.Keywords
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