Room-temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy
- 2 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (10) , 1165-1166
- https://doi.org/10.1063/1.105544
Abstract
Gain‐guided Ga0.84In0.16As0.14Sb0.86/Al0.75 Ga0.25As0.06Sb0.94 double‐heterostructure lasers emitting at ∼2.2 μm have been operated cw at heat sink temperatures up to 30 °C. The maximum output powers obtained at 5 and 20 °C were 10.5 and 4.6 mW/facet, respectively. For pulsed operation of broad‐stripe lasers 300 μm wide and 1000 μm long, the threshold current density was as low as 940 A/cm2, the lowest room‐temperature value reported for diode lasers emitting beyond 2 μm.Keywords
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