MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared diode lasers
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 669-676
- https://doi.org/10.1016/0022-0248(91)91061-e
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μmApplied Physics Letters, 1990
- Frequency-domain analysis of time-dependent reflection high-energy electron diffraction intensity dataJournal of Vacuum Science & Technology B, 1990
- Structural Relaxation in Metastable Strained-Layer SemiconductorsAnnual Review of Materials Science, 1989
- Lasers And Avalanche Photodiodes For IR Fiber Optics In The 2-2,5 µm Spectral RangePublished by SPIE-Intl Soc Optical Eng ,1989
- Continuous-wave lasing at room temperature in InGaSbAs/GaAlSbAs injection heterostructures emitting in the spectral range 2.2–2.4 μmSoviet Journal of Quantum Electronics, 1988
- Reproducible growth conditions by group III and group V controlled incorporation rate measurementsJournal of Vacuum Science & Technology B, 1988
- Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxyApplied Physics Letters, 1986
- Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength rangeJournal of Electronic Materials, 1985
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Molecular-beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsyApplied Physics Letters, 1977