2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density
- 7 September 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (10) , 764-766
- https://doi.org/10.1063/1.98860
Abstract
Double heterostructure 2.2 μm wavelength lasers were fabricated from Ga0.84In0.16As0.15Sb0.85/ AlxGa1−xAs0.04Sb0.96 wafers grown by liquid phase epitaxy. These structures were grown with Al‐rich confinement layers (x=0.4) for optical confinement and thin intermediate cladding layers (x=0.34) to relieve the strain resulting from the lattice mismatch of the Al‐rich confinement layers with respect to the substrate and the active layer. A threshold current density as low as 1.7 kA/cm2 was obtained at room temperature.Keywords
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