Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs
- 1 July 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 369 (1-2) , 338-341
- https://doi.org/10.1016/s0040-6090(00)00876-2
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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