High concentration n-type doping in Si layers epitaxially grown by ultra-high vacuum chemical vapor deposition with cracking heater
- 1 March 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 172 (3-4) , 376-380
- https://doi.org/10.1016/s0022-0248(96)00748-8
Abstract
No abstract availableKeywords
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