I n s i t u doping in silicon selective epitaxial growth at 800 °C by ultralow-pressure chemical vapor deposition
- 5 November 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (19) , 2010-2012
- https://doi.org/10.1063/1.103993
Abstract
In situ doping capabilities, n and p type, in silicon selective epitaxial growth by ultralow‐pressure chemical vapor deposition are presented in this letter. Selective epitaxial layers were grown at 800 °C after an in situ Ar/H2 plasma sputter clean. The n‐ and p‐type dopant sources were 1000 ppm arsine and 1000 ppm diborane, respectively, in silane mixed with pure silane for dilution. It was found that high structural quality in situ doped selective epitaxial layers with n‐ or p‐type dopant concentration of 1018 cm−3 can be obtained.Keywords
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