Alloyed Epitaxial Heterojunctions between n‐InSb and p‐CdTe
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 35 (1) , K9-K12
- https://doi.org/10.1002/pssb.19690350160
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Croissance épitaxique de composés semiconducteurs par évaporation-diffusion en régime isothermeRevue de Physique Appliquée, 1966
- Photocurrent spectra of GeGaAs heterojunctionsSolid-State Electronics, 1964
- INVERSION OF {111} SURFACES IN SINGLE-CRYSTAL REGROWTH DURING INTERFACE-ALLOYING OF INTERMETALLIC COMPOUNDSApplied Physics Letters, 1964
- Interface-alloy epitaxial heterojunctionsSolid-State Electronics, 1964