Epitaxial Superconductor Film Growth on Ultratffln Silicon Wafers for Infrared Detection

1 January 1992

journal article
Published by Springer Nature in MRS Proceedings

Vol. 275
https://doi.org/10.1557/proc-275-747

Abstract

Epitaxial YBCO/YSZ thin films have been successfully grown on ultrathin Si(100) wafers as part of an effort to fabricate infrared detectors which are both fast and highly responsive. Single crystal Si wafers with thicknesses ranging from 400 μm to 3μm are used as growth substrates. Detectors are fabricated by patterning the YBCO films into meanderline structures and their IR response is evaluated as a function of substrate thickness. So far, we have achieved a responsivity of 1750 V/W with a 10 Hz chopping rate on the 25 μm substrate, and rise/fall times as fast as 3 msec on the 3 μm substrate. We have also measured the low temperature IR transmission from 15 μm to 300 μm of both the YSZ buffered Si substrate, and the complete YBCO/YSZ/Si sample. This study indicates that silicon is a superior substrate for the fabrication of high performance infrared focal plane detector arrays.

Keywords

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