Mechanism of Interconversion among Radiation-Induced Defects in Amorphous Silicon Dioxide
- 26 February 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 86 (9) , 1777-1780
- https://doi.org/10.1103/physrevlett.86.1777
Abstract
We here present a series of ab initio quantum-chemical calculations on clusters of atoms modeling several oxygen-deficiency-related defects in amorphous silica and illustrate how these defect centers will change their atomic configurations upon photoionization. We first give theoretical evidence that structural conversion from a neutral oxygen monovacancy to a divalent Si defect is possible, explaining the observed photoluminescence properties associated with these defects.This publication has 26 references indexed in Scilit:
- Optically active oxygen-deficiency-related centers in amorphous silicon dioxideJournal of Non-Crystalline Solids, 1998
- Fiber Bragg gratingsReview of Scientific Instruments, 1997
- Structural origin of the 5.16 eV optical absorption band in silica and Ge-doped silicaApplied Physics Letters, 1994
- Isoelectronic series of twofold coordinated Si, Ge, and Sn atoms in glassy SiO2: a luminescence studyJournal of Non-Crystalline Solids, 1992
- Optical properties of oxygen-deficient centers in silica glasses fabricated in H2 or vacuum ambientJournal of Applied Physics, 1991
- Effects of excimer laser irradiation on the transmission, index of refraction, and density of ultraviolet grade fused silicaApplied Physics Letters, 1989
- Intrinsic defects in fused silicaJournal of Non-Crystalline Solids, 1985
- Photoinduced paramagnetic defects in amorphous silicon dioxidePhysical Review B, 1984
- Photosensitivity in optical fiber waveguides: Application to reflection filter fabricationApplied Physics Letters, 1978
- Paramagnetic Resonance of Lattice Defects in Irradiated QuartzJournal of Applied Physics, 1956