Growth and doping of gallium arsenide using molecular beam epitaxy (MBE): Thermodynamic and kinetic aspects
- 2 September 1983
- journal article
- Published by Elsevier in Surface Science
- Vol. 132 (1-3) , 375-389
- https://doi.org/10.1016/0039-6028(83)90548-4
Abstract
No abstract availableKeywords
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