Amorphous GaAs Films by Molecular Beam Deposition

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Abstract
Amorphous GaAs films are prepared by molecular beam deposition. The dependence of the film structure and composition on the preparation conditions is studied. By setting the substrate temperature just below the crystallization temperature, near-stoichiometric amorphous films are obtained with As-rich molecular beams. The electrical and optical properties of the films are summarized in terms of the composition ratio. The results imply the existence of stoichiometric amorphous GaAs films and the possibility of controlling their conduction type.