Plasma deposition of GaP and GaN
- 1 March 1978
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (3) , 1291-1293
- https://doi.org/10.1063/1.325024
Abstract
We report the preparation of thin films of gallium phosphide and gallium nitride by deposition from low‐pressure rf‐excited plasmas in mixtures of trimethylgallium with ammonia and phosphine, respectively. With the deposition conditions used, the gallium phosphide is found to be amorphous, while the gallium nitride is polycrystalline. We present preliminary measurements of optical and electrical properties.This publication has 12 references indexed in Scilit:
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