Cathodoluminescence study of GaN epitaxial layers
- 1 December 1996
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 42 (1-3) , 230-234
- https://doi.org/10.1016/s0921-5107(96)01712-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescencePhysical Review B, 1996
- Spatial distribution of the luminescence in GaN thin filmsApplied Physics Letters, 1996
- Properties of the yellow luminescence in undoped GaN epitaxial layersPhysical Review B, 1995
- Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor depositionPhysical Review B, 1995
- Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxyApplied Physics Letters, 1995
- Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructureApplied Physics Letters, 1994
- Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layersApplied Physics Letters, 1994
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Mechanism of Yellow Luminescence in GaNJapanese Journal of Applied Physics, 1980