Mechanism of emission of Si I, Si II, and Si III from Si which is ion-bombarded in the presence of oxygen
- 15 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 509-512
- https://doi.org/10.1016/0167-5087(83)90846-3
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Atomic excitations in sputtering studied with group two element targetsNuclear Instruments and Methods in Physics Research, 1982
- Statistical model for the formation of excited atoms in the sputtering processPhysical Review B, 1982
- Atomic excitations in sputtering studied with group two element targetsSurface Science, 1981
- The measurement of energy parameters for atoms sputtered in excited statesSurface Science, 1981
- On the kinetic energies of sputtered excited particles: II. Theory and applications to group IIA fluoridesSurface Science, 1980
- An AES-SIMS study of silicon oxidation induced by ion or electron bombardmentApplications of Surface Science, 1980
- A study of the feasibility of a surface plasma influencing secondary ion and photon emission under medium-energy ion bombardment ∗Surface Science, 1979
- The charge states of He and Ne backscattered from Ni in the energy range of 1.5–15 keVNuclear Instruments and Methods, 1978
- On the problem of whether excited states amongst sputtered particles are of thermal originRadiation Effects, 1978
- Bombardment-induced photon emission from Al and Al2O3 targetsSurface Science, 1974