Galvanomagnetic Effects of Warm-Electrons in Many-Valley Semiconductors
- 1 August 1964
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 19 (8) , 1290-1309
- https://doi.org/10.1143/jpsj.19.1290
Abstract
No abstract availableThis publication has 50 references indexed in Scilit:
- Deviations from Ohm's law in germanium and siliconJournal of Physics and Chemistry of Solids, 1961
- Mobility in high-resistivity germanium at high d.c. electric fieldsJournal of Physics and Chemistry of Solids, 1960
- The field-dependence of carrier mobility in silicon and germaniumJournal of Physics and Chemistry of Solids, 1960
- Microwave Field Dependence of Drift Mobility in GermaniumPhysical Review B, 1959
- Microwave Hall effect in germanium and silicon at 20 kmc/sJournal of Physics and Chemistry of Solids, 1959
- The mobility of electrons heated by microwave fields in n-type germaniumJournal of Physics and Chemistry of Solids, 1959
- Field Dependence of Mobility in p-Type GermaniumProceedings of the Physical Society. Section B, 1957
- Experimental Evidence of the Anisotropy of Hot Electrons in n-type GermaniumJournal of the Physics Society Japan, 1956
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953
- Mobilities of Electrons in High Electric FieldsPhysical Review B, 1951