Electrical Conduction in p-Type InSb between 100 and 2 k
- 1 January 1959
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 73 (1) , 128-131
- https://doi.org/10.1088/0370-1328/73/1/424
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The Temperature Variation of the Concentration of Impurity Carriers in SiliconProceedings of the Physical Society, 1958
- The Electrical Conductivity and Hall Effect of SiliconProceedings of the Physical Society, 1958
- The Role of Evaporation in Zone Refining Indium Antimonide†Journal of Electronics and Control, 1957
- Shallow Impurity States in Silicon and GermaniumPublished by Elsevier ,1957
- Hall Effect and Conductivity of InSbPhysical Review B, 1955
- Electrical Properties of-Type Indium Antimonide at Low TemperaturesPhysical Review B, 1955