Process modeling and simulation for Hg1-xCdxTe. Part I: Status of stanford university mercury cadmium telluride process simulator
- 1 May 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (5) , 565-572
- https://doi.org/10.1007/bf02657964
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Process modeling and simulation for Hg1-xCdxTe. Part II: Self-diffusion, interdiffusion, and fundamental mechanisms of point-defect interactions in Hg1-xCdxTeJournal of Electronic Materials, 1995
- Hg0.8Cd0.2Te native defects: Densities and dopant propertiesJournal of Electronic Materials, 1993
- Process modeling of point defect effects in Hg1-xCdxTeJournal of Electronic Materials, 1993
- Growth method, composition, and defect structure dependence of mercury diffusion in CdxHg1–xTeJournal of Electronic Materials, 1993
- The diffusion of mercury in cadmium tellurideJournal of Crystal Growth, 1992
- Mechanisms of incorporation of donor and acceptor dopants in (Hg,Cd)Te alloysJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- The existence region of the Hg0.8Cd0.2Te phase fieldJournal of Electronic Materials, 1985
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper DopedJournal of the Electrochemical Society, 1981
- The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4TeJournal of Electronic Materials, 1978
- Electrical and far-infrared optical properties of p-type Hg1−xCdxTeJournal of Applied Physics, 1976