Growth method, composition, and defect structure dependence of mercury diffusion in CdxHg1–xTe
- 1 August 1993
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 22 (8) , 967-971
- https://doi.org/10.1007/bf02817511
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Cation self-diffusion in Hg0.8Cd0.2TeSemiconductor Science and Technology, 1992
- The influence of dislocations on mercury self-diffusion in epitaxial and bulk grown CdxHg1−xTeJournal of Crystal Growth, 1992
- Effect of the dislocation density on minority-carrier lifetime in molecular beam epitaxial HgCdTeApplied Physics Letters, 1991
- Mercury diffusion in Hg1−xCdxTeJournal of Electronic Materials, 1991
- Diffusion studies in the Hg1−xCdxTe systemJournal of Vacuum Science & Technology A, 1988
- Interdiffusion in HgCdTe/CdTe StructuresJournal of Electronic Materials, 1986
- EBIC characterization of electrically active defects in (Hg,Cd)TeJournal of Vacuum Science & Technology A, 1983
- Diffusion in CdxHg1-xTe and related materialsJournal of Crystal Growth, 1982