Effect of the dislocation density on minority-carrier lifetime in molecular beam epitaxial HgCdTe
- 18 November 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (21) , 2718-2720
- https://doi.org/10.1063/1.105895
Abstract
The photoconductive minority-carrier lifetime has been measured as a function of temperature and etch-pit density in n-type HgCdTe grown by molecular beam epitaxy with a composition range x=0.22–0.23 to determine the limiting recombination mechanisms, particularly those related to dislocation density. In the extrinsic region at temperatures T<77 K, the minority-carrier lifetime is limited by Shockley–Read recombination. Strong correlation between minority-carrier lifetime and dislocation density is observed.Keywords
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