Minority carrier lifetime in the region close to the interface between the anodic oxide and CdHgTe
- 24 July 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (1-2) , 270-274
- https://doi.org/10.1016/0022-0248(85)90156-3
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) StructurePublished by SPIE-Intl Soc Optical Eng ,1982