The effects of chemical bonding and band offset constraints at Si-dielectric interfaces on the integration of alternative high-K dielectrics into aggressively-scaled CMOS Si devices
- 30 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 291-294
- https://doi.org/10.1016/s0167-9317(99)00391-3
Abstract
No abstract availableKeywords
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