Low temperature solid phase crystallization of amorphous silicon at 380 °C
- 1 December 1998
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (11) , 6463-6465
- https://doi.org/10.1063/1.368887
Abstract
Amorphous silicon (a- Si ) was crystallized by metal induced crystallization (MIC) in an electric field. A 2 nm Ni layer on a- Si was used for the crystallization. The MIC temperature can be reduced to 380 °C in an electric field of 360 V/cm. The Ni-MIC poly-Si has a crystalline volume fraction of 92% with an average grain size of ∼150 nm. The fact that the crystallization temperature can be reduced appears to be due to the enhancement of NiSi 2 migration through a- Si in an electric field.This publication has 9 references indexed in Scilit:
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