Low temperature impurity diffusion in SiC: Planar quantum-size p-n junctions and n-p-n transistor structures
- 31 December 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (12) , 1741-1747
- https://doi.org/10.1016/0038-1101(93)90221-b
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Quantum-size p-n junctions in siliconSolid-State Electronics, 1991
- Non-equilibrium impurity diffusion in siliconSemiconductor Science and Technology, 1991
- Point Defects and Diffusion in Silicon and Gallium ArsenideDefect and Diffusion Forum, 1991