Non-equilibrium impurity diffusion in silicon
- 1 July 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (7) , 577-581
- https://doi.org/10.1088/0268-1242/6/7/002
Abstract
Non-equilibrium impurity diffusion of dopants has been realized in monocrystalline silicon through controlled surface injection of self-interstitials and vacancies. By varying the parameters of the surface oxide layer during the boron/phosphorus diffusion process, it was possible to obtain, for the first time, quantum-size diffusion profiles and p-n junctions with dimensions that could be controlled over the 10-220 AA range.Keywords
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